Effects of Ar Flow on the Optoelectronic Characteristics of Aluminum-doped Zinc Oxide (AZO) Thin Films Prepared by RF Magnetron Sputtering

in International Symposium (oral presentation paper), 國際研討會(全文口頭發表)
標題Effects of Ar Flow on the Optoelectronic Characteristics of Aluminum-doped Zinc Oxide (AZO) Thin Films Prepared by RF Magnetron Sputtering
出版類型國際研討會(全文口頭發表)
出版年度2012
AuthorsRu-Yuan Yang, 吳宏偉, Ru-Yuan Yang 楊茹媛, CHIN-MIN HSIUNG 熊京民, & Chien-Hsun Chu 朱建勳
出版日期Jun 4 2012 12:0
會議地點台中
其他編號0000
中文摘要

Abstract—Transparent conductive aluminum-doped zinc oxide (ZnO:Al, AZO) thin films with different Ar flow (from 40 to 70 sccm) were prepared by using RF magnetron sputtering. Since decreasing the grain size of the AZO thin films with increased Ar flow, the grain boundary scattering and lattice defects were decreased, and caused the enhancement of mobility from 3.931 to 3.248 cm2/Vs at Ar flow
of 60 sccm and substrate temperature of 70°C under sputtering power increased from 150 W to 250 W. In the transmission spectra, the absorption edge was about 350 nm and optical transmittance was about 80 – 96.5% in the visible range. The
lowest resistivity of 7.53 × 10-4 Ω-cm and highest transmittance of 96.5% was obtained at Ar flow of 60 sccm under substrate temperature of 70°C and sputtering power of 150 W. The observed property of the AZO thin films is suitable for transparent conductive electrode applications.

校址:912 屏東縣內埔鄉學府路1號 總機:886-8-7703202 傳真:886-8-7740165 系統開發統維護單位:國立屏東科技大學 電算中心 版權所有