Influences of Sputtering Power and Annealing Temperatures on the Properties of Al Doped ZnO Thin Films for Near IR Reflecting Applications

in International Symposium (oral presentation paper), 國際研討會(全文口頭發表)
標題Influences of Sputtering Power and Annealing Temperatures on the Properties of Al Doped ZnO Thin Films for Near IR Reflecting Applications
出版類型國際研討會(全文口頭發表)
出版年度2012
AuthorsRu-Yuan Yang, 吳宏偉, Ru-Yuan Yang 楊茹媛, CHIN-MIN HSIUNG 熊京民, Lu-Shiang Huang 黃祿祥, Chien-Hsun Chu 朱建勳, & Min Hang Weng 翁敏航
出版日期Jan 18 2012 12:0
會議地點香港
其他編號0000
中文摘要

Al doped zinc oxide (ZnO:Al, AZO) transparent conductive oxide (TCO) thin films were deposited by dual target dc magnetron sputtering on glass substrate for the high near infrared (IR) reflective properties. The influences of different sputtering power and annealing temperature on the structural, electrical and optical properties were investigated. The lowest resistivity of 25×10?3 -cm with a carrier concentration of 5×10?20 cm?3 was obtained at sputtering power of 150 W and annealing temperature of 300 C. The average near IR reflectivity in the wavelength range of 1000–1900 nm is around 70% for the prepared AZO thin films.

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